The present contribution is devoted to the production of the Ni-Bi-Se thin films widely used in the field of electronics, electrotechnology, and computer technology. During the process, at first, the Bi-Se compound has been formed on the nickel electrode by electrochemical method, and then by thermal treatment of this compound at 673K, ternary compound Ni3Bi2Se2 has been obtained. The results show that as the concentration of bismuth is increasing, its amount in deposited films increases regularly. The formation of the Ni3Bi2Se2 compound was also confirmed by XRD results. The photochemical properties of the obtained compounds were investigated in the dark and light, constant current of 100 nA for 0-600 seconds. With the illumination of the dark samples, the potential shifts from a positive side to a negative side, this decrease indicates that obtained thin films are not only photosensitive, also have n-type conductivity.

In the present paper, we have studied the effect of photo-illumination on electrical properties of nanocrystalline ZnSe thin films. The ZnSe thin films with different grain sizes (coherently diffracting domains) have been prepared. The semiconducting material with the composition Zn25Se75 has been prepared using melt-quenching technique. Thermal evaporation technique has been used to prepare nanocrystalline ZnSe thin films on highly cleaned glass substrates at different partial pressures of Ar gas. The grain size has been controlled by the partial pressure of inert gas. The grain size has been calculated using X-ray diffraction plots. Mobility activation has been studied from the photocurrent decay curves. The effective density of states (Neff), frequency factor (S), and trap depth (E) have been calculated for all the films having different grain sizes. Three different types of trap levels have been found in these films. There is a linear distribution of traps having different energies below the conduction band. The increase in photoconductivity is explained in terms of built in potential barriers (φb) at the grain boundaries.

Measurement of thermal properties for some coatings as potential selective surfaces is reported and parameters affecting the preparation of the coatings are indicated. Although Mo-Black oxide electroplated on aluminum substrate among the coatings did not show the selectivity desired, but its resistance and tolerance at moderate temperature (250°C for 36 hours at atmospheric pressure) are considerable and should be taken as a possible candidate for color coatings in decoration and as a resistant coating against oxidation. Dip coating on galvanized steel and zinc shows some order of selectivity (a/e » 5); better selectivity which is not far to reach would make this coating a good and suitable material. From the economical point of view and the simplicity of production it is also a promising coating as selective surfaces for flat plate solar collectors as well as concentrated collectors.